Spetsifikatsioon tootele Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; SMT
| Case | SMPD-B |
| Electrical mounting | SMT |
| Semiconductor structure | diode/transistor |
| Max. off-state voltage | 1.2kV |
| Technology | ISOPLUS™, Sonic FRD™ |
| Power dissipation | 147W |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 75A |
| Topology | boost chopper |
| Collector current | 30A |