Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: IXA70I1200NA
    Tootja: IXYS
    Tootja tootekood: IXA70I1200NA
    • Case
    • Electrical mounting
    • Mechanical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Features of semiconductor devices
    • Technology
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current

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    Spetsifikatsioon tootele Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 65A; SOT227B

    Case SOT227B
    Electrical mounting screw
    Mechanical mounting screw
    Semiconductor structure single transistor
    Max. off-state voltage 1.2kV
    Features of semiconductor devices high voltage
    Technology XPT™
    Power dissipation 350W
    Gate-emitter voltage ±20V
    Pulsed collector current 150A
    Collector current 65A