Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: IXBN75N170
    Tootja: IXYS
    Tootja tootekood: IXBN75N170
    • Case
    • Electrical mounting
    • Mechanical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Features of semiconductor devices
    • Technology
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current

    111,68 € 111,68 € (KM-TA) 111.68 EUR

    111,68 €

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    Spetsifikatsioon tootele Module: IGBT; single transistor; Urmax: 1.7kV; Ic: 75A; SOT227B

    Case SOT227B
    Electrical mounting screw
    Mechanical mounting screw
    Semiconductor structure single transistor
    Max. off-state voltage 1.7kV
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Power dissipation 625W
    Gate-emitter voltage ±20V
    Pulsed collector current 680A
    Collector current 75A