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    3. Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; PLUS247™
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    Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; PLUS247™

    Kordarv: 300.0
    Minimum quantity: 300.0
    Tootekood: IXBX64N250
    Tootja: IXYS
    Tootja tootekood: IXBX64N250
    Sertifikaadid:
    • Mounting
    • Case
    • Kind of package
    • Type of transistor
    • Features of semiconductor devices
    • Technology
    • Turn-on time
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current
    • Gate charge
    • Collector-emitter voltage
    • Turn-off time

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    Spetsifikatsioon tootele Transistor: IGBT; BiMOSFET™; 2.5kV; 64A; 735W; PLUS247™

    Mounting THT
    Case PLUS247™
    Kind of package tube
    Type of transistor IGBT
    Features of semiconductor devices high voltage
    Technology BiMOSFET™
    Turn-on time 632ns
    Power dissipation 735W
    Gate-emitter voltage ±20V
    Pulsed collector current 600A
    Collector current 64A
    Gate charge 400nC
    Collector-emitter voltage 2.5kV
    Turn-off time 397ns