Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
IXDN75N120
Tootja: IXYS
Tootja tootekood: IXDN75N120
Product downloads
Spetsifikatsioon tootele Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 150A; SOT227B
| Case | SOT227B |
| Electrical mounting | screw |
| Mechanical mounting | screw |
| Semiconductor structure | single transistor |
| Max. off-state voltage | 1.2kV |
| Technology | NPT |
| Power dissipation | 660W |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 190A |
| Collector current | 150A |