Spetsifikatsioon tootele Transistor: N-MOSFET; Polar™; unipolar; 1kV; 20A; 660W; TO268; 300ns
| Mounting | SMD |
| Case | TO268 |
| Kind of package | tube |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | HiPerFET™, Polar™ |
| Drain-source voltage | 1kV |
| Drain current | 20A |
| Power dissipation | 660W |
| On-state resistance | 570mΩ |
| Reverse recovery time | 300ns |
| Gate charge | 126nC |