Spetsifikatsioon tootele Transistor: N-MOSFET; Polar3™; unipolar; 600V; 4A; Idm: 8A; 114W
| Mounting | SMD |
| Case | TO252 |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | HiPerFET™, Polar3™ |
| Drain-source voltage | 600V |
| Drain current | 4A |
| Pulsed drain current | 8A |
| Power dissipation | 114W |
| On-state resistance | 2.4Ω |
| Reverse recovery time | 250ns |
| Gate charge | 6.9nC |