Spetsifikatsioon tootele Module: IGBT; single transistor; Urmax: 600V; Ic: 170A; SOT227B
| Case | SOT227B |
| Electrical mounting | screw |
| Mechanical mounting | screw |
| Semiconductor structure | single transistor |
| Max. off-state voltage | 600V |
| Technology | GenX3™, PT |
| Power dissipation | 735W |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 1.2kA |
| Collector current | 170A |