Spetsifikatsioon tootele Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A
| Mounting | SMD |
| Case | TO263 |
| Kind of package | tube |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | TrenchMV™ |
| Drain-source voltage | 100V |
| Drain current | 130A |
| Pulsed drain current | 350A |
| Power dissipation | 360W |
| On-state resistance | 9.1mΩ |
| Reverse recovery time | 77ns |
| Gate charge | 104nC |