Spetsifikatsioon tootele Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 84A; SOT227B
| Case | SOT227B |
| Electrical mounting | screw |
| Mechanical mounting | screw |
| Semiconductor structure | single transistor |
| Max. off-state voltage | 1.2kV |
| Technology | GenX3™, XPT™ |
| Power dissipation | 830W |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 460A |
| Collector current | 84A |