Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B

    Kordarv: 300.0
    Minimum quantity: 300.0
    Tootekood: IXYN85N120C4H1
    Tootja: IXYS
    Tootja tootekood: IXYN85N120C4H1
    • Case
    • Electrical mounting
    • Mechanical mounting
    • Semiconductor structure
    • Max. off-state voltage
    • Technology
    • Technology
    • Power dissipation
    • Gate-emitter voltage
    • Pulsed collector current
    • Collector current

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    Spetsifikatsioon tootele Module: IGBT; single transistor; Urmax: 1.2kV; Ic: 85A; SOT227B

    Case SOT227B
    Electrical mounting screw
    Mechanical mounting screw
    Semiconductor structure single transistor
    Max. off-state voltage 1.2kV
    Technology GenX4™, XPT™
    Power dissipation 600W
    Gate-emitter voltage ±20V
    Pulsed collector current 420A
    Collector current 85A