Spetsifikatsioon tootele Transistor: IGBT; GenX3™; 1.2kV; 17A; 230W; TO268HV
| Mounting | SMD |
| Case | TO268HV |
| Kind of package | tube |
| Type of transistor | IGBT |
| Technology | GenX3™, XPT™ |
| Turn-on time | 60ns |
| Power dissipation | 230W |
| Gate-emitter voltage | ±20V |
| Pulsed collector current | 88A |
| Collector current | 17A |
| Gate charge | 53nC |
| Collector-emitter voltage | 1.2kV |