Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W

Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W

Kordarv: 1.0

Minimum quantity: 1.0

Tootekood: LGE3M160120E
Tootja: LUGUANG ELECTRONIC
Tootja tootekood: LGE3M160120E
Sertifikaadid:

Mounting
Case
Kind of package
Kind of package
Polarisation
Type of transistor
Kind of channel
Technology
Drain-source voltage
Drain current
Pulsed drain current
Power dissipation
On-state resistance
Gate charge

12,36 € 12,36 € (KM-TA) 12.36 EUR

12,36 €

Seda kombinatsiooni ei eksisteeri.

Product downloads

LGE3M160120E.pdf

Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 11A; Idm: 38A; 127W

Mounting	SMD
Case	D2PAK
Kind of package	reel, tape
Polarisation	unipolar
Type of transistor	N-MOSFET
Kind of channel	enhanced
Technology	SiC
Drain-source voltage	1.2kV
Drain current	11A
Pulsed drain current	38A
Power dissipation	127W
On-state resistance	285mΩ
Gate charge	42nC