Bipolar Transistor Array, NPN, 1.1 V, 500 mA, 1000 hFE, SOIC
Kordarv:
1.0
Minimum quantity:
1.0
Tootekood:
MC1413DR2G
Tootja: ONSEMI
Tootja tootekood: MC1413DR2G
Product downloads
Spetsifikatsioon tootele Bipolar Transistor Array, NPN, 1.1 V, 500 mA, 1000 hFE, SOIC
| Output current | 500mA |
| Mounting | SMD |
| Case | SO16 |
| Type of integrated circuit | driver |
| Operating temperature | -20...85°C |
| Kind of package | reel, tape |
| Number of channels | 7 |
| Application | for inductive load |
| Output voltage | 50V |
| Input voltage | 30V |
| Kind of integrated circuit | darlington, transistor array |
| Max operating temperature | 85°C |