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    3. Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 111A; 268W
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    Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 111A; 268W

    Kordarv: 1.0
    Minimum quantity: 1.0
    Tootekood: MSC080SMB120SDT/RM
    Tootja: MICROCHIP TECHNOLOGY
    Tootja tootekood: MSC080SMB120SDT/RM
    Sertifikaadid:
    • Mounting
    • Kind of package
    • Kind of package
    • Polarisation
    • Type of transistor
    • Kind of channel
    • Features of semiconductor devices
    • Technology
    • Drain-source voltage
    • Drain current
    • Power dissipation
    • On-state resistance
    • Gate charge

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    Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 30A; Idm: 111A; 268W

    Mounting SMD
    Kind of package reel, tape
    Polarisation unipolar
    Type of transistor N-MOSFET
    Kind of channel enhanced
    Features of semiconductor devices Kelvin terminal
    Technology SiC
    Drain-source voltage 1.2kV
    Drain current 30A
    Power dissipation 268W
    On-state resistance 100mΩ
    Gate charge 64nC