Spetsifikatsioon tootele Transistor: N-MOSFET
| Mounting | SMD |
| Case | D3PAK, TO268 |
| Kind of package | tube |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | SiC |
| Drain-source voltage | 1.7kV |
| Drain current | 4A |
| Pulsed drain current | 12A |
| Power dissipation | 63W |
| On-state resistance | 940mΩ |
| Gate charge | 18nC |