Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 46A; Idm: 160A; 313W
| Mounting | THT |
| Case | TO247-3 |
| Kind of package | tube |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | SiC |
| Drain-source voltage | 1.2kV |
| Drain current | 46A |
| Pulsed drain current | 160A |
| Power dissipation | 313W |
| On-state resistance | 60mΩ |
| Gate charge | 95nC |