Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 25A; Idm: 80A; 183W
| Mounting | THT |
| Case | TO247-3 |
| Kind of package | tube |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | SiC |
| Drain-source voltage | 1.2kV |
| Drain current | 25A |
| Pulsed drain current | 80A |
| Power dissipation | 183W |
| On-state resistance | 120mΩ |
| Gate charge | 52nC |