Spetsifikatsioon tootele Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
| Mounting | THT |
| Case | TO247-3 |
| Kind of package | tube |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | SiC |
| Drain-source voltage | 900V |
| Drain current | 32A |
| Pulsed drain current | 184A |
| Power dissipation | 110W |
| On-state resistance | 60mΩ |
| Gate charge | 87nC |