Transistor: P-MOSFET; unipolar; -20V; -4.1A; Idm: -13A; 1.2W; SC88

Kordarv: 1.0
Minimum quantity: 1.0
Tootekood: NVJS4151PT1G
Tootja: ONSEMI
Tootja tootekood: NVJS4151PT1G
Sertifikaadid:
  • Mounting
  • Case
  • Kind of package
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

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Spetsifikatsioon tootele Transistor: P-MOSFET; unipolar; -20V; -4.1A; Idm: -13A; 1.2W; SC88

Mounting SMD
Case SC88
Kind of package reel, tape
Polarisation unipolar
Type of transistor P-MOSFET
Kind of channel enhanced
Drain-source voltage -20V
Drain current -4.1A
Pulsed drain current -13A
Power dissipation 1.2W
On-state resistance 67mΩ
Gate charge 10nC