Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
Kordarv:
36.0
Minimum quantity:
36.0
Tootekood:
NXH450B100H4Q2F2PG
Tootja: ONSEMI
Tootja tootekood: NXH450B100H4Q2F2PG
Spetsifikatsioon tootele Module: IGBT; SiC diode/transistor; Urmax: 1kV; Ic: 450A; Press-Fit
| Electrical mounting | Press-Fit |
| Mechanical mounting | screw |
| Max. off-state voltage | 1kV |
| Technology | SiC |
| Application | for UPS, Inverter |
| Gate-emitter voltage | ±20V |
| Collector current | 450A |