Transistor: N/P-MOSFET

Transistor: N/P-MOSFET

Kordarv: 1.0

Minimum quantity: 5.0

Tootekood: SI1029X-T1-GE3
Tootja: VISHAY
Tootja tootekood: SI1029X-T1-GE3
Sertifikaadid:

Mounting
Case
Case
Kind of package
Kind of package
Polarisation
Type of transistor
Kind of channel
Technology
Drain-source voltage
Drain current
Pulsed drain current
Power dissipation
On-state resistance
Gate charge
Kind of transistor

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Spetsifikatsioon tootele Transistor: N/P-MOSFET

Mounting	SMD
Case	SC89, SOT563
Kind of package	reel, tape
Polarisation	unipolar
Type of transistor	N/P-MOSFET
Kind of channel	enhanced
Technology	TrenchFET®
Drain-source voltage	60/-60V
Drain current	0.22/-0.135A
Pulsed drain current	650mA
Power dissipation	130mW
On-state resistance	3/8Ω
Gate charge	0.75/1.7nC
Kind of transistor	complementary