Transistor: N-MOSFET

Transistor: N-MOSFET

Kordarv: 2500.0

Minimum quantity: 2500.0

Tootekood: SI4900DY-T1-E3
Tootja: VISHAY
Tootja tootekood: SI4900DY-T1-E3
Sertifikaadid:

Mounting
Case
Kind of package
Kind of package
Polarisation
Type of transistor
Kind of channel
Technology
Drain-source voltage
Drain current
Pulsed drain current
Power dissipation
On-state resistance
Gate charge

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Product downloads

SI4900DY-T1-E3-LNK.txt

Spetsifikatsioon tootele Transistor: N-MOSFET

Mounting	SMD
Case	SO8
Kind of package	reel, tape
Polarisation	unipolar
Type of transistor	N-MOSFET x2
Kind of channel	enhanced
Technology	TrenchFET®
Drain-source voltage	60V
Drain current	5.3A
Pulsed drain current	20A
Power dissipation	3.1W
On-state resistance	72mΩ
Gate charge	20nC