Transistor: N-MOSFET

Kordarv: 1.0
Minimum quantity: 1.0
Tootekood: SIHB12N65E-GE3
Tootja: VISHAY
Tootja tootekood: SIHB12N65E-GE3
Sertifikaadid:
  • Mounting
  • Case
  • Case
  • Kind of package
  • Kind of package
  • Polarisation
  • Type of transistor
  • Kind of channel
  • Drain-source voltage
  • Drain current
  • Pulsed drain current
  • Power dissipation
  • On-state resistance
  • Gate charge

4,70 € 4,70 € (KM-TA) 4.7 EUR

4,70 €

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Spetsifikatsioon tootele Transistor: N-MOSFET

Mounting SMD
Case D2PAK, TO263
Kind of package reel, tape
Polarisation unipolar
Type of transistor N-MOSFET
Kind of channel enhanced
Drain-source voltage 650V
Drain current 8A
Pulsed drain current 28A
Power dissipation 156W
On-state resistance 380mΩ
Gate charge 70nC