Spetsifikatsioon tootele Transistor: P-MOSFET x2
| Mounting | SMD |
| Case | SO8 |
| Kind of package | reel, tape |
| Polarisation | unipolar |
| Type of transistor | P-MOSFET x2 |
| Kind of channel | enhanced |
| Technology | TrenchFET® |
| Drain-source voltage | -60V |
| Drain current | -4.4A |
| Pulsed drain current | -18A |
| Power dissipation | 3.3W |
| On-state resistance | 176mΩ |
| Gate charge | 40nC |