Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W

Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W

Kordarv: 1.0

Minimum quantity: 3.0

Tootekood: YJD80G06A-YAN
Tootja: YANGJIE TECHNOLOGY
Tootja tootekood: YJD80G06A
Sertifikaadid:

Mounting
Case
Kind of package
Kind of package
Polarisation
Type of transistor
Kind of channel
Technology
Drain-source voltage
Drain current
Pulsed drain current
Power dissipation
On-state resistance
Gate charge

0,61 € 0,61 € (KM-TA) 0.61 EUR

0,61 €

Seda kombinatsiooni ei eksisteeri.

Product downloads

YJD80G06A.pdf

Spetsifikatsioon tootele Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W

Mounting	SMD
Case	TO252
Kind of package	reel, tape
Polarisation	unipolar
Type of transistor	N-MOSFET
Kind of channel	enhanced
Technology	SPLIT GATE TRENCH
Drain-source voltage	60V
Drain current	56A
Pulsed drain current	240A
Power dissipation	42.5W
On-state resistance	11mΩ
Gate charge	31nC