Specification for Transistor: N-MOSFET
| Mounting | SMD |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | NexFET™ |
| Drain-source voltage | 12V |
| Drain current | 2.1A |
| Power dissipation | 500mW |
| Reverse recovery time | 6ns |
| Gate charge | 1.4nC |
| Mounting | SMD |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | NexFET™ |
| Drain-source voltage | 12V |
| Drain current | 2.1A |
| Power dissipation | 500mW |
| Reverse recovery time | 6ns |
| Gate charge | 1.4nC |