Specification for Transistor: N-MOSFET; unipolar; 40V; 100A; 120W; VSONP8
| Mounting | SMD |
| Case | VSONP8 |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | MOSFET, NexFET™ |
| Version | ESD |
| Drain-source voltage | 40V |
| Drain current | 100A |
| Power dissipation | 120W |
| On-state resistance | 3.4mΩ |
| Gate charge | 32nC |