Specification for Transistor: N-MOSFET; unipolar
| Mounting | SMD |
| Case | VSONP8 |
| Polarisation | unipolar |
| Type of transistor | N-MOSFET |
| Kind of channel | enhanced |
| Technology | NexFET™ |
| Version | ESD |
| Drain-source voltage | 60V |
| Drain current | 60A |
| Power dissipation | 66W |
| Reverse recovery time | 27ns |
| Gate charge | 14.5nC |